卢太平

卢太平

教育经历

2011.09-2014.07，博士中国科学院物理研究所

2008.09-2011.07，硕士华南师范大学光电子材料与技术研究所

2004.09-2008.07，学士长春理工大学材料科学与工程学院

工作经历

2023.01-至今，副教授beat365中国在线体育

2021.01-2022.12，讲师beat365中国在线体育

2016.10-2018.10，博士后瑞典隆德大学固体物理系

2014.07-2020.12，讲师太原理工大学新材料界面科学与工程教育部重点实验室

研究领域

Ga(Al,In)N，Ga₂O₃等半导体材料外延生长

宽禁带半导体材料物性研究

宽禁带半导体光电子及电子器件

半导体低维电子材料

承担研究课题

[1] 2016.01-2018.12，InGaN基量子点/量子阱复合结构的外延生长及光学性质的研究，主持，国家自然科学基金，Grant No.61504090

[2] 2023.01-2025.12，量子调控InGaN基低维复合系统载流子动力学性质的研究，主持，山东省自然科学基金，GrantNo.ZR2022MA045

发表文章

[1] Yanning Zheng, Jingxia Zheng, Junli Wang, Yongzhen Yang, Taiping Lu^*, Xuguang Liu. Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak Emission. Nanomaterials, Vol.10, No.2, pp.303, 2020

[2] Xiaorun Zhou, Taiping Lu^*, Yadan Zhu, et al. Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N₂/H₂-Grown GaN Barrier. Nanoscale Research Letters, Vol.12, pp.354, 2017

[3] Liu Qing-Ming, Lu Tai-Ping^*, Zhu Ya-Dan, et al. Effect of medium-high temperature interlayer thickness on the optical and electrical properties of blue light emitting diodes. Chinese Journal of Luminescence (in Chinese), Vol.37, No.7, pp.829, 2016

[4] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Temperature-dependent photoluminescence in light-emitting diodes. Scientific Reports, Vol.4, pp.6131, 2014

[5] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs. Journal of Display Technology, Vol.10, No.2, pp.146, 2014

[6] Taiping Lu, Ziguang Ma, Chunhua Du, et al. Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer. Applied physics A, Vol.114, No.4, pp.1055, 2014

[7] Taiping Lu, Shuti Li, Chao Liu, et al. Advantages of GaN based light-emitting diodes with a p InGaN hole reservoir layer. Applied Physics Letters, Vol.100, No.14, pp.141106, 2012

[8] Taiping Lu, Shuti Li, Kang Zhang, et al. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes. Optics Express, Vol.19, No.19, pp.18319, 2011

[9] Lu Tai-Ping, Li Shu-Ti, Zhang Kang, et al. The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer. Chinese Physics B, Vol.20, No.09, pp.098503, 2011

[10] Lu Tai-Ping, Li Shu-Ti, Zhang Kang, et al. Blue InGaN light-emitting diodes with dip-shaped quantum wells. Chinese Physics B, Vol.20, No.10, pp.108504, 2011

授权发明专利

[1]卢太平，朱亚丹，周小润，许并社，一种DUV LED外延片结构，2018.04.13，中国，ZL201610466965.9

[2]卢太平，朱亚丹，许并社，一种GaN基绿光LED外延结构及其制备方法，2018.10.26，中国，ZL 201610324298.0

[3]卢太平，朱亚丹，许并社，周小润，一种提高GaN基LED内量子效率的外延生长方法，2019.01.25，中国，ZL201710140872.1

[4]卢太平，郑延宁，朱亚丹，周小润，许并社，一种InGaN薄膜的制备方法，2020.02.14，中国，ZL201810024739.4